CS20N60A8H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche .
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
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Rating
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CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 20 250 0.36
performance and enhance the avalanche energ.
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